NXP Semiconductors
BAT85
Schottky barrier single diode
BAT85
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? NXP B.V. 2012. All rights reserved
Product data sheet
24 July 2012
4
/
8
0
10
20
VR
(V)
30
12
Cd
(pF)
0
4
8
mgc681
f = 1 MHz.
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
00
50
100
150
200
250
50
100
150
IF(AV)
(mA)
Tamb
(°C)
mra540
Fig. 4.
Average forward current as a function of
ambient temperature; typical values
8.
Test information
trr
(1)
+
IF
t
output
signal
tr
tp
t
10
%
90
%
VR
input
signal
V
=
VR
+IF
×RS
RS
=
50
Ω
IF
D.U.T.
Ri
=
50
Ω
SAMPLING
OSCILLOSCOPE
mga881
(1) IR
= 1 mA
Fig. 5.
Reverse recovery time test circuit and waveforms
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