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     NXP Semiconductors BAT85 Schottky barrier single diode BAT85 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 24 July 2012 4 / 8 0 10 20 VR (V) 30 12 Cd (pF) 0 4 8 mgc681 f = 1 MHz. Fig. 3. Diode capacitance as a function of reverse voltage; typical values 00 50 100 150 200 250 50 100 150 IF(AV) (mA) Tamb (°C) mra540 Fig. 4. Average forward current as a function of ambient temperature; typical values 8. Test information trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR +IF ×RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 (1) IR = 1 mA Fig. 5. Reverse recovery time test circuit and waveforms |
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